Tunable plasma wave resonant detection of optical beating in high electron mobility transistor
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چکیده
منابع مشابه
Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor
Voltage-tunable plasmon resonances in the two-dimensional electron gas 2DEG of a high electron mobility transistor HEMT fabricated from the InGaAs/InP materials system are reported. The device was fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography and a semitransparent gate contact that consisted of a 0.5 m period transmission grating...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2006
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2388142